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| STN2NF10 N-channel 100V - 0.23 - 2.4A - SOT-223 STripFETTM II Power MOSFET Features Type STN2NF10 VDSS 100V RDS(on) < 0.26 ID 2.4A 2 Description 1 2 3 This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SOT-223 Application Internal schematic diagram Switching application - DC-DC converters Order code Part number STN2NF10 Marking N2NF10 Package SOT-223 Packaging Tape & reel April 2007 Rev 6 1/13 www.st.com 13 Contents STN2NF10 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STN2NF10 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Derating factor Value 100 20 2.4 1.5 17 0.026 3.3 200 30 -55 to 150 Unit V V A A A W/C W mJ V/ns C PTOT (2) EAS (3) dv/dt (4) Tj Tstg Total dissipation at TC = 25C Single pulse avalanche energy Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. This value is rated according to Rthj-amb, t < 10sec 3. IAS = 2.4A, VDD = 30V, Rg=4.7, starting Tj = 25C 4. ISD < 6A, di/dt < 500A/s, VDD= 80% V(BR)DSS Table 2. Symbol Thermal data Parameter Value 38 62.5 Unit C/W C/W Rthj-amb (1) Thermal resistance junction-amb Rthj-amb (2) Thermal resistance junction-amb 1. When mounted on 1inch FR-4 board, 2 oz. Cu, (t < 10sec) 2. When mounted on 1inch FR-4 board, 2 oz. Cu, (t >10sec) 3/13 Electrical characteristics STN2NF10 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating,Tc=125C VDS = 30V, Tc=125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 1.2A 2 0.23 Min. 100 1 10 1 100 4 0.26 Typ. Max. Unit V A A A nA V IDSS IGSS VGS(th) RDS(on) Table 4. Symbol gfs Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =15V, ID=1.2A Min. Typ. 2.5 280 45 20 10 2.5 4 14 Max. Unit S pF pF pF nC nC nC VDS =25V, f=1MHz, VGS=0 VDD=80V, ID = 6A VGS =10V (see Figure 15) 4/13 STN2NF10 Electrical characteristics Table 5. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=50V, ID = 2.4A VGS =10V, RG=4.7 (see Figure 14) VDD=50V, ID = 2.4A VGS =10V, RG=4.7 (see Figure 14) Min. Typ. 6 10 20 3 Max. Unit ns ns ns ns Table 6. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.4A, VGS=0 ISD= 6A, VDD=10V di/dt=100A/s,Tj=150C (see Figure 19) 70 175 5 Test conditions Min. Typ. Max 2.4 17 1.2 Unit A A V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5% 5/13 Electrical characteristics STN2NF10 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STN2NF10 Figure 7. Gate charge vs. gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs. temperature Figure 10. Normalized on resistance vs. temperature Figure 11. Source-drain diode forward characteristics Figure 12. Normalized BVDSS vs. temperature 7/13 Electrical characteristics Figure 13. Max drain current vs. temperature STN2NF10 8/13 STN2NF10 Test circuit 3 Test circuit Figure 15. Gate charge test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/13 Package mechanical data STN2NF10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STN2NF10 Package mechanical data SOT-223 MECHANICAL DATA mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10 o DIM. inch MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.130 0.264 0.138 0.276 0.146 0.287 10o MIN. TYP. MAX. 0.071 0.031 0.122 0.013 0.264 TYP. P008B 11/13 Revision history STN2NF10 5 Revision history Table 7. Date 14-Sep-2006 29-Mar-2007 04-Apr-2007 Revision history Revision 4 5 6 Changes The document has been reformatted Figure 1 has been updated New test condition for IDSS on Table 3 12/13 STN2NF10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13 |
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